气氛 Atmosphere | 炉温（℃） Furnace | 表面负荷 （W/cm2） Surface Load | 对元件的影响 Effect On Elements | 解决办法
Solution
|
氨 | 1290 | 3.8 | 与sic作用生成甲烷减少sio2保护膜 Decreasing SiO2 protective film by Acting with SiC to generate Methane | 露点激活 Make it active at dew point |
CO₂ | 1450 | 3.1 | 腐蚀碳化硅 Attacking sic | 用石英管保护 Protecting by quartz tube |
18%CO | 1500 | 4.0 | 无影响 No |
|
20%CO | 130 | 3.8 | 吸附碳粒影响sio2保护膜 Affecting SiO2 protective film by Adsorbing C grains |
|
卤素 | 704 | 3.8 | 腐蚀碳化硅减少sio2保护膜 Decreasing SiO2 protective film by eroding SiC | 用石英管保护 Protecting by quartz tube |
碳氢化合物 | 1310 | 3.1 | 吸附碳粒致热污染，分解的碳沉积，易造成电气故障 Causing hot pollution by adsorbing C grains | 送进充分的空气 Filling with plenty of air |
氢 | 1290 | 3.1 | 与sic作用反应生成甲烷，减少sic2保护膜 Decreasing SiO2 protective film by Acting with SiC to generate Methane | 露点激活 Make it Active at dew point |
甲烷 | 1370 | 3.1 | 吸附碳粒致热污染 Causing hot pollution by adsorbing C grains |
|
N | 1370 | 3.1 | 与sic反应形成氮化硅绝缘 Generating SiN insulating layer by acting with SiC |
|
Na | 1310 | 3.8 | 侵蚀碳化硅 Eroding sic | 用石英管保护 Protecting by quartz tube |
SO2 | 1310 | 3.8 | 侵蚀碳化硅 Eroding sic | 用石英管保护 Protecting by quartz tube |
真空 | 1204 | 3.8 |
|
|
氧 | 1310 | 3.8 | 碳化硅被氧化 Sic oxidized |
|
水（不同含量） | 1090-1370 | 3.1-3.6 | 与sic作用生成硅的水化物 Generating hydrate of silicon by acting on SiC |
|
