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碳化硅电热元件的特性

[2026-05-14]    来源:    作者:超级管理员  阅读:4次  【打印此页】

Characteristics of the silicon carbide heating elements

温度电阻特性

碳化硅电热元件,有其独特地温度电阻特性曲线。一般在850℃以前是随温度的升高,阻值呈非线性减少趋势;850℃以上其电阻随温度升高而呈非线性增加趋势。如图1所示

Temperature electrical resistance properties

Silicon carbide heating element has its unique resistance temperature characteristic curve. Gener-ally before 850°C it is along with the rise of temperature,the resistance value is in nonlinear trend; above 850°C its resistance is in nonlinear increase with the temperature increasing trend. As shown in figure1

应用中元件的电阻变化特性

碳化硅电热元件在长期使用中,其表面碳化硅要氧化形成一层二氧化硅导致元件阻值变大,称之为老化,SiC+20,SiO+CO,,元件阻值在一定条件下使用中增长的快慢反映了元件内在质量优劣,-般地把元件阻值由R。变化增加到4R。所用的时间称之为元件的使用寿命,如图2所示

The change characteristics of the electrical resistance of the components in the application

In the long-term use, silicon carbide of the surface of silicon carbide heating element oxidates to form a layer of silicon dioxide, leading to the increase of element resistance, called aging, SiC+202 SiO,+CO{, the fast growth of element resistance in use under certain conditions reflects of advantages and disadvantages of the internal quality of the element. Generally the time that the element resistance increases from R, to 4 R, is called the service life of components, as shown in figure 2

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